PBLS6023D Datasheet, PDF (8/16 Pages) NXP Semiconductors – 60 V, 1.5 A PNP BISS loadswitch

NXP Semiconductors
PBLS6023D
60 V, 1.5 A PNP BISS loadswitch
600
h_FE
(1)
400
(2)
200
(3)
006aab523
−3
I_C
(A)
−2
−1
006aab524
I_B (mA) = −30
−27
−24 _−21
−18
−15
−12
−9
−6
−3
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 5. TR1 (PNP): DC current gain as a function of
collector current; typical values
−1.2
V_BE
(V)
−1.0
−0.8
−0.6
006aab525
(1)
(2)
(3)
−0.4
0
0.0
−0.5
−1.0
−1.5
−2.0
V_CE (V)
T_amb = 25 °C
Fig 6. TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
−1.2
V_BEsat
(V)
−1.0
−0.8
−0.6
006aab526
(1)
(2)
(3)
−0.4
−0.2
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
−0.2
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 7. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 8. TR1 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PBLS6023D_1
Product data sheet
Rev. 01 — 13 August 2009
© NXP B.V. 2009. All rights reserved.
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