PBLS6023D Datasheet, PDF (6/16 Pages) NXP Semiconductors – 60 V, 1.5 A PNP BISS loadswitch

NXP Semiconductors
PBLS6023D
60 V, 1.5 A PNP BISS loadswitch
10³
Z_th(j-a)
(K/W)
10²
10
1
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
006aab510
10^−1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
Fig 4.
Ceramic PCB, Al₂O₃, standard footprint
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
TR1; PNP low V_CEsat transistor
I_CBO
collector-base cut-off
current
I_CES
collector-emitter
cut-off current
V_CB = −60 V; I_E = 0 A
V_CB = −60 V; I_E = 0 A;
T_j = 150 °C
V_CE = −48 V; V_BE = 0 A
I_EBO
emitter-base cut-off V_EB = −5 V; I_C = 0 A
current
h_FE
V_CEsat
R_CEsat
V_BEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
V_CE = −2 V; I_C = −100 mA
V_CE = −2 V; I_C = −500 mA
V_CE = −2 V; I_C = −1 A
V_CE = −2 V; I_C = −1.5 A
I_C = −0.5 A; I_B = −50 mA
I_C = −1 A; I_B = −50 mA
I_C = −1 A; I_B = −100 mA
I_C = −1.5 A; I_B = −100 mA
I_C = −1 A; I_B = −100 mA
I_C = −1.5 A; I_B = −100 mA
I_C = −0.5 A; I_B = −50 mA
I_C = −1.5 A; I_B = −100 mA
Min
-
-
-
-
180
[1] ₁₅₀
[1] ₁₄₀
[1] ₁₂₀
[1] _-
[1] _-
[1] _-
[1] _-
[1] _-
[1] _-
[1] _-
[1] _-
Typ Max Unit
-
−100 nA
-
−50 µA
-
−100 nA
-
−100 nA
285 -
255 -
210 -
185 -
−65 −100 mV
−130 −200 mV
−110 −170 mV
−165 −260 mV
110 170 mΩ
110 175 mΩ
−0.85 −1 V
−0.93 −1.1 V
PBLS6023D_1
Product data sheet
Rev. 01 — 13 August 2009
© NXP B.V. 2009. All rights reserved.
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