BUK6226-75C Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET Rev. 01 — 4 October 2010

NXP Semiconductors
BUK6226-75C
N-channel TrenchMOS FET
4
V_GS(th)
(V)
3
2
1
max
typ
min
003aad805
0
-60
0
60
120
180
T_j (°C)
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
10^-6
0
003aad806
min typ max
1
2
3
4
V_GS (V)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
100
003aae865
3
V_GS(V) = 3.8 4.0
R_DSon
4.5
5.0
a
(mΩ)
2.5
75
2
003aad804
50
1.5
8.0
1
25
0.5
0
0
20
40
60
80
I _D (A)
0
-60
0
60
120
180
T_j (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK6226-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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