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BUK6226-75C Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET Rev. 01 — 4 October 2010
NXP Semiconductors
BUK6226-75C
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 4
Min Typ Max Unit
-
-
1.87 K/W
10
Zth(j-mb)
(K/W)
003aae795
δ = 0.5
1
0.2
0.1
0.05
10-1
0.02
single shot
P
δ = tp
T
tp
t
10-2
T
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6226-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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