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TYN20X-800T Datasheet, PDF (7/12 Pages) NXP Semiconductors – SCR
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NXP Semiconductors
Symbol
Parameter
Conditions
ID
off-state current
VD = 800 V; Tj = 150 °C
IR
reverse current
Tj = 150 °C; VR = 800 V
Dynamic charateristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
3
IGT
IGT(25°C)
2
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3
IL
IL(25°C)
2
TYN20X-800T
SCR
Min Typ Max Unit
-
0.2 1
mA
-
0.2 1
mA
300 -
-
V/µs
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1
1
0
-50
0
50
100
150
Tj (°C)
0
-50
0
50
100
150
Tj (°C)
Fig. 7. Normalized gate trigger current as a function of Fig. 8. Normalized latching current as a function of
junction temperature
junction temperature
3
IH
IH(25°C)
2
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40
IT
(A)
30
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20
1
(1) (2) (3)
10
0
-50
0
50
100
150
Tj (°C)
Fig. 9. Normalized holding current as a function of
junction temperature
0
0
1
2
VT (V)
Vo = 1.0485 V; Rs = 0.0133 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
TYN20X-800T
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 July 2012
© NXP B.V. 2012. All rights reserved
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