TYN20X-800T Datasheet, PDF (1/12 Pages) NXP Semiconductors – SCR

TYN20X-800T
SCR
23 July 2012
Product data sheet
1. Product profile
1.1 General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full
pack" plastic package intended for use in applications requiring very high inrush current
capability, high thermal cycling performance and high junction temperature capability
(T_j(max) = 150 °C).
1.2 Features and benefits
• High bidirectional blocking voltage capability
• High junction operating temperature capability
• High thermal cycling performance
• Isolated package
• Planar passivated for voltage ruggedness and reliability
• Very high current surge capability
1.3 Applications
• Capacitive Discharge Ignition (CDI)
• Crowbar protection
• Inrush protection
• Motor control
• Voltage regulation
1.4 Quick reference data
Table 1.
Symbol
V_DRM
V_RRM
I_TSM
T_j
I_T(RMS)
Quick reference data
Parameter
Conditions
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T_j(init) = 25 °C;
state current
t_p = 10 ms; Fig. 4; Fig. 5
half sine wave; T_j(init) = 25 °C;
t_p = 8.3 ms
junction temperature
RMS on-state current half sine wave; T_h ≤ 75 °C; Fig. 1; Fig. 2
Min Typ Max Unit
-
-
800 V
-
-
800 V
-
-
210 A
-
-
231 A
-
-
150 °C
-
-
20
A
Scan or click this QR code to view the latest information for this product