PSMN8R5-60YS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

NXP Semiconductors
PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Min Typ Max Unit
Source-drain diode
V_SD
source-drain voltage I_S = 15 A; V_GS = 0 V; T_j = 25 °C; see Figure 17 -
0.8 1.2 V
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 30 V
-
43.3 -
ns
-
61.4 -
nC
60
g_fs
(S)
40
20
003aad794
4000
C
(pF)
3000
2000
1000
003aad801
C_iss
C_rss
0
0
20
40
60
80
I_D (A)
0
0
3
6
9
12
V_GS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
40
R_DSon
(mΩ)
30
003aad797
20
10
Fig 6. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
80
I_D
10 7 6
(A)
60
40
003aad795
5.5
5
V_GS (V) = 4.5
20
0
4
8
12
16
20
V_GS (V)
0
0
0.5
1
1.5
2
V_DS (V)
Fig 7. Drain-source on-state resistance as a function Fig 8. Output characteristics: drain current as a
of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN8R5-60YS_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 December 2009
© NXP B.V. 2009. All rights reserved.
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