PSMN8R5-60YS Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 8 mΩ standard level MOSFET

PSMN8R5-60YS
N-channel LFPAK 60 V, 8 mΩ standard level MOSFET
Rev. 01 — 22 December 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ High efficiency gains in switching
power converters
„ Improved mechanical and thermal
characteristics
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
-
-
60 V
-
-
76 A
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 3
-
-
106 W
T_j
junction temperature
Avalanche ruggedness
-55 -
175 °C
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
V_GS = 10 V; T_j(init) = 25 °C;
I_D = 76 A; V_sup ≤ 60 V;
R_GS = 50 Ω; unclamped
-
-
97 mJ
Q_GD
gate-drain charge V_GS = 10 V; I_D = 60 A;
-
7.7 -
nC
V_DS = 30 V; see Figure 15 and 14
Q_G(tot) total gate charge
V_GS = 10 V; I_D = 60 A;
-
39 -
nC
V_DS = 30 V; see Figure 14 and 15