PSMN6R5-80BS Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 80V 6.9mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN6R5-80BS
N-channel 80V 6.9mΩ standard level MOSFET in D2PAK
20
R_DSon
(mΩ)
16
003aad448
12
8
4
4
8
12
16
20
V_GS (V)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 9. Drain-source on-state resistance as a function Fig 10. Sub-threshold drain current as a function of
of gate-source voltage; typical values
gate-source voltage
5
V_GS(th)
(V)
4
003aae992
2.5
a
max
2.0
003aad045
3
typ
1.5
min
2
1.0
1
0.5
0
−60
0
60
120
180
T_j (°C)
0.0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature
PSMN6R5-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
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