|
PSMN6R5-80BS Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel 80V 6.9mΩ standard level MOSFET in D2PAK | |||
|
◁ |
NXP Semiconductors
PSMN6R5-80BS
N-channel 80V 6.9m⦠standard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
Simplified outline
G
gate
D
drain[1]
mb
S
source
D
mounting base; connected to
drain
2
13
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN6R5-80BS
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp ⤠10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 49 A; Vsup ⤠80 V;
RGS = 50 â¦; unclamped
[1] Continuous current rating is limited by package.
PSMN6R5-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 2 March 2012
Min
-
-
-20
-
[1] -
-
-
-55
-55
-
Max Unit
80 V
80 V
20
V
82 A
100 A
470 A
210 W
175 °C
175 °C
260 °C
-
100 A
-
470 A
-
700 mJ
© NXP B.V. 2012. All rights reserved.
2 of 14
|
▷ |