PSMN2R2-25YLC Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN2R2-25YLC
N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower
Table 7. Characteristics …continued
Symbol
Parameter
Conditions
Q_oss
output charge
Source-drain diode
V_GS = 0 V; V_DS = 12 V; f = 1 MHz;
T_j = 25 °C
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 25 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 12 V
t_a
reverse recovery rise V_GS = 0 V; I_S = 25 A; dI_S/dt = -100 A/µs;
time
V_DS = 12 V; see Figure 18
t_b
reverse recovery fall
time
Min Typ Max Unit
-
16.7 -
nC
-
0.8 1.1 V
-
35 -
ns
-
31 -
nC
-
21 -
ns
-
14 -
ns
100
ID ¹⁰
(A)
80
3.5
4.5
60
40
20
0
0
0.5
1
003aaf 710
3.0
VGS (V) = 2.8
2.6
2.4
1.5
2
VDS (V)
12
RDS on
(mΩ)
10
003aaf 711
8
6
4
2
0
0
4
8
12
16
VGS (V)
Fig 6. Output characteristics; drain current as a
function of drain-source voltage
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN2R2-25YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 May 2011
© NXP B.V. 2011. All rights reserved.
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