PSMN2R2-25YLC Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology

PSMN2R2-25YLC
N-channel 25 V 2.4 mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 1 — 2 May 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High reliability Power SO8 package,
qualified to 175°C
„ Low parasitic inductance and
resistance
„ Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
„ Ultra low QG, QGD and QOSS for high
system efficiencies at low and high
loads
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Power OR-ing
„ Server power supplies
„ Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
25 °C ≤ T_j ≤ 175 °C
voltage
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
T_j
junction
temperature
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 4.5 V; I_D = 25 A;
T_j = 25 °C; see Figure 12
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 12
Min Typ Max Unit
-
-
25 V
[1] _-
-
100 A
-
-
106 W
-55 -
175 °C
-
2.6 3.15 mΩ
-
2
2.4 mΩ