PSMN1R2-30YLC Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN1R2-30YLC
N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower
Table 7. Characteristics …continued
Symbol
Parameter
Conditions
Q_oss
output charge
Source-drain diode
V_GS = 0 V; V_DS = 15 V; f = 1 MHz;
T_j = 25 °C
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 25 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 15 V
t_a
reverse recovery rise V_GS = 0 V; I_S = 25 A; dI_S/dt = -100 A/µs;
time
V_DS = 15 V; see Figure 18
t_b
reverse recovery fall
time
Min Typ Max Unit
-
33
-
nC
-
0.8 1.1 V
-
41.5 -
ns
-
45
-
nC
-
25
-
ns
-
16.5 -
ns
100
ID
(A)
80
60
2.8
3.0
4.5
10
40
20
0
0
0.5
1
003aaf 556
2.6
2.4
VGS (V) = 2.2
1.5
2
VDS (V)
12
RDS on
(mΩ)
10
003aaf 557
8
6
4
2
0
0
4
8
12
16
VGS (V)
Fig 6. Output characteristics; drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN1R2-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 May 2011
© NXP B.V. 2011. All rights reserved.
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