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| PSMN1R2-30YLC Datasheet, PDF (5/15 Pages) NXP Semiconductors – N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology | |||
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NXP Semiconductors
PSMN1R2-30YLC
N-channel 30 V 1.25m⦠logic level MOSFET in LFPAK using NextPower
104
ID
(A)
103
102
10
1
10-1
10-1
Limit RDSon = VDS / ID
1
003aaf554
DC
10
tp =10 μ s
100 μs
1 ms
10 ms
100 ms
102
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
Conditions
see Figure 5
Min Typ Max Unit
-
0.58 0.7 K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10-1
0.1
0.05
0.02
10-2
single shot
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P
δ = tp
T
tp
t
T
10-3
1e-6
10-5
10-4
10-3
10-2
10-1
tp (s) 1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN1R2-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 3 May 2011
© NXP B.V. 2011. All rights reserved.
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