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PMD9010D Datasheet, PDF (7/16 Pages) NXP Semiconductors – MOSFET driver
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NXP Semiconductors
PMD9010D
MOSFET driver
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Transistor 1 (TR1)
ICBO
collector-base cut-off VCB = 30 V; IE = 0 A
current
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 1 mA
IC = 10 mA; IB = 0.5 mA
VBEsat base-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
VBE
base-emitter voltage VCE = 5 V; IC = 2 mA
Transistor 2 (TR2)
ICBO
collector-base cut-off VCB = 30 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 °C
VCEsat collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 200 mA; IB = 20 mA
VBEsat base-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
VBE
base-emitter voltage VCE = 5 V; IC = 2 mA
VCE = 5 V; IC = 10 mA
Diode (D1)
VF
forward voltage
TR2 and D1
IF = −200 mA
hFE
DC current gain
Device
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 100 mA
VCE = 5 V; IC = 200 mA
td
delay time
tr
rise time
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
IC = 0.05 A; IB = 2.5 mA
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Min Typ Max Unit
-
-
100 nA
-
-
50
µA
-
-
0.1 mA
200 290 450
-
60
200 mV
-
0.7 -
V
-
660 -
mV
-
-
15
nA
-
-
5
µA
-
60
200 mV
-
200 400 mV
-
340 500 mV
-
0.7 -
V
-
0.9 -
V
610 660 710 mV
-
-
770 mV
[1] -
-
−1.1 V
200 290 450
95
140 -
24
35
-
-
13
-
ns
-
77
-
ns
-
90
-
ns
-
853 -
ns
-
205 -
ns
-
1058 -
ns
PMD9010D_1
Product data sheet
Rev. 01 — 20 November 2006
© NXP B.V. 2006. All rights reserved.
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