PMD9010D Datasheet, PDF (10/16 Pages) NXP Semiconductors – MOSFET driver

NXP Semiconductors
PMD9010D
MOSFET driver
500
h_FE
400
300
(2)
(3) (4) (5)
200
(1)
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0.20
I_C
(A)
0.16
0.12
0.08
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I_B (mA) = 5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
100
0.04
0
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 5 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
(4) T_amb = 125 °C
(5) T_amb = 150 °C
Fig 11. TR2 and D1: DC current gain as a function of
collector current; typical values
1.2
V_BE
(V)
1.0
0.8
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(1)
(2)
0.6
(3)
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig 12. TR2: Collector current as a function of
collector-emitter voltage; typical values
1.2
V_BEsat
(V)
1.0
0.8
0.6
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(1)
(2)
(3)
0.4
0.4
0.2
10^−2
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 5 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 13. TR2: Base-emitter voltage as a function of
collector current; typical values
0.2
10^−2
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 14. TR2: Base-emitter saturation voltage as a
function of collector current; typical values
PMD9010D_1
Product data sheet
Rev. 01 — 20 November 2006
© NXP B.V. 2006. All rights reserved.
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