PHP78NQ03LT Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PHP78NQ03LT
N-channel TrenchMOS logic level FET
60
10 V 4.5 V
I_D 6 V
(A) _{5 V}
40
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4V
3.5 V
20
V_GS = 3 V
40
I_D
(A)
V_DS > I_D x R_DSon
30
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20
175 °C Tj = 25 °C
10
0
0
0.5
1
1.5
2
V_DS (V)
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
0
1
2
3
4
V_GS (V)
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
10^-1
I_D
(A)
10^-2
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2.5
V_GS(th)
(V)
2
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max
10^-3
min
typ
max
10^-4
1.5
typ
1
min
10^-5
0.5
10^-6
0
1
2
3
V_GS (V)
0
-60
0
60
120
180
T_j (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PHP78NQ03LT_6
Product data sheet
Rev. 06 — 30 January 2009
© NXP B.V. 2009. All rights reserved.
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