PHP78NQ03LT Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PHP78NQ03LT
N-channel TrenchMOS logic level FET
120
I_der
(%)
80
03aa24
120
P_der
(%)
80
03aa16
40
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS / I_D
10
DC
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aaa175
t_p = 10 μ s
100 μs
1 ms
10 ms
100 ms
1
1
10
10²
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHP78NQ03LT_6
Product data sheet
Rev. 06 — 30 January 2009
© NXP B.V. 2009. All rights reserved.
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