PHP191NQ06LT Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PHP191NQ06LT
N-channel TrenchMOS logic level FET
2
03ne89
a
1.5
1
0.5
0
-60
0
60
120
180
Tj (°C)
10
R _DSon
(mΩ)
8
T_j = 25 °C
6
4
2
0
0
80
03ar03
V_GS = 3.2 V
3.6 V
4V
5V
10 V
160
240
I_D (A)
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
V_GS
(V)
8
I_D = 25 A
T_j = 25 °C
03ar07
6
14 V
V_DD = 44 V
4
2
Fig 10. Drain-source on-state resistance as a function
of drain current; typical values
10⁵
C
(pF)
10⁴
03ar06
C_iss
10³
C_oss
C_rss
0
0
50
100
150
200
Q_G (nC)
10²
10^−1
1
10
10²
V_DS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
PHP191NQ06LT_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 January 2010
© NXP B.V. 2010. All rights reserved.
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