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| PHP191NQ06LT Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET | |||
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NXP Semiconductors
PHP191NQ06LT
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 7 and 8
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 7 and 8
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 7 and 8
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 55 V; VGS = 0 V; Tj = 175 °C
VGS = 15 V; VDS = 0 V; Tj = 25 °C
VGS = -15 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
see Figure 9
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 10 and 9
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 10 and 9
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 10 and 9
ID = 25 A; VDS = 44 V; VGS = 5 V;
Tj = 25 °C; see Figure 11
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
VDS = 30 V; RL = 1.2 â¦; VGS = 5 V;
RG(ext) = 10 â¦; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
50
-
55
-
-
-
-
V
-
V
2.2 V
0.5 -
-
V
1
1.5 2
V
-
-
1
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
-
4.4 mâ¦
-
3.5 4.2 mâ¦
-
-
7.4 mâ¦
-
3.1 3.7 mâ¦
-
95.6 -
nC
-
17.2 -
nC
-
37.6 -
nC
-
7665 -
pF
-
1045 -
pF
-
465 -
pF
-
63
-
ns
-
232 -
ns
-
273 -
ns
-
178 -
ns
-
0.79 1.2 V
-
78
-
ns
-
171 -
nC
PHP191NQ06LT_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 14 January 2010
© NXP B.V. 2010. All rights reserved.
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