BUK9E04-30B Datasheet, PDF (7/13 Pages) NXP Semiconductors – TrenchMOS logic level FET

Philips Semiconductors
BUK9E04-30B
TrenchMOS™ logic level FET
350
03no70
ID
10
5
3.8
Label is VGS (V)
(A) ₄
3.6
280
3.4
210
3.2
5
RDSon
(mΩ)
4
03no69
3
140
2.8
70
2.6
2.4
2.2
0
2
0
2
4
6
8
10
VDS (V)
3
2
3
7
11 _{VGS (V)} 15
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
10
03no71
2
RDSon ^{Label is VGS (V)} 3 3.2 3.4 _3.6
(mΩ)
a
8
1.5
03aa27
6
4
2
0
70
T_j = 25 °C
3.8
4
5
10
140
210
280
350
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
1
0.5
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12108
Product data
Rev. 01 — 14 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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