BUK9E04-30B Datasheet, PDF (1/13 Pages) NXP Semiconductors – TrenchMOS logic level FET

BUK9E04-30B
TrenchMOS™ logic level FET
Rev. 01 — 14 November 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Logic level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s E_DS(AL)S ≤ 1.3 J
s I_D ≤ 75 A
s R_DSon = 3.4 mΩ (typ)
s P_tot ≤ 254 W.
2. Pinning information
Table 1: Pinning - SOT226 simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
mb
2
drain (d)
3
source (s)
mb
mounting base,
connected to
drain (d)
Symbol
d
g
MBB076
s
123
MBK112
SOT226 (I²-PAK)