English
Language : 

BUK7C10-75AITE Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET
◁
NXP Semiconductors
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
from upper edge of drain mounting base to
center of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 18
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
-
35
-
ns
-
108 -
ns
-
185 -
ns
-
100 -
ns
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
75
-
ns
-
270 -
nC
BUK7C10-75AITE_3
Product data sheet
Rev. 03 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
7 of 15
 ▷