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| BUK7C10-75AITE Datasheet, PDF (3/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET | |||
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NXP Semiconductors
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
VDS
VDGS
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ⥠25 °C; Tj ⤠175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 2;
see Figure 3
-
75
V
-
75
V
-20 20
V
[1] -
114 A
[2] -
75
A
IDM
Ptot
IGS(CL)
peak drain current
total power dissipation
gate-source clamping
current
Visol(FET-TSD) FET to temperature
sense diode isolation
voltage
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; tp ⤠10 µs; pulsed; see Figure 3
Tmb = 25 °C; see Figure 1
continuous
pulsed; tp = 5 ms; δ = 0.01
[2] -
75
A
-
456 A
-
272 W
-
10
mA
-
50
mA
-100 100 V
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
-55 175 °C
-55 175 °C
IS
source current
Tmb = 25 °C
[1] -
[2] -
114 A
75
A
ISM
peak source current
Avalanche ruggedness
tp ⤠10 µs; pulsed; Tmb = 25 °C
-
456 A
EDS(AL)S
non-repetitive
ID = 75 A; Vsup ⤠75 V; RGS = 50 â¦; VGS = 10 V;
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
-
739 mJ
Electrostatic discharge
Vesd
electrostatic discharge HBM; C = 100 pF; R = 1.5 kâ¦
voltage
-
6
kV
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
BUK7C10-75AITE_3
Product data sheet
Rev. 03 â 17 February 2009
© NXP B.V. 2009. All rights reserved.
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