BUK7907-55ATE Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7907-55ATE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Min Typ Max Unit
L_D
internal drain inductance from upper edge of drain mounting base to -
2.5 -
nH
center of die; T_j = 25 °C
L_S
internal source inductance from source lead to source bond pad;
-
7.5 -
nH
T_j = 25 °C
Source-drain diode
V_SD
source-drain voltage
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
-
0.85 1.2 V
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = -10 V;
-
80
-
ns
Q_r
recovered charge
V_DS = 30 V; T_j = 25 °C
-
200 -
nC
BUK7907-55ATE_3
Product data sheet
Rev. 03 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
7 of 15