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BUK7907-55ATE Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET
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NXP Semiconductors
BUK7907-55ATE
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max Unit
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VGS
gate-source voltage
ID
drain current
Tmb = 25 °C; VGS = 10 V; see Figure 2;
see Figure 3;
-
-20
[1] -
[2] -
55
V
20
V
140 A
75
A
IDM
Ptot
IGS(CL)
peak drain current
total power dissipation
gate-source clamping
current
Tmb = 100 °C; VGS = 10 V; see Figure 2
Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3
Tmb = 25 °C; see Figure 1
pulsed; tp = 5 ms; δ = 0.01
continuous
[2] -
-
-
-
-
75
A
560 A
272 W
50
mA
10
mA
Visol(FET-TSD) FET to temperature
sense diode isolation
voltage
-100 100 V
Tstg
storage temperature
Tj
junction temperature
VDGS
drain-gate voltage
Source-drain diode
-55 175 °C
-55 175 °C
-
55
V
IS
source current
Tmb = 25 °C;
[1] -
[2] -
140 A
75
A
ISM
peak source current
Avalanche ruggedness
tp ≤ 10 µs; pulsed; Tmb = 25 °C
-
560 A
EDS(AL)S
non-repetitive
ID = 68 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V;
drain-source avalanche Tj(init) = 25 °C; unclamped
energy
-
460 mJ
Electrostatic Discharge
Vesd
electrostatic discharge HBM; C = 100 pF; R = 1.5 kΩ
voltage
-
6
kV
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
BUK7907-55ATE_3
Product data sheet
Rev. 03 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
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