BUK7905-40AI Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7905-40AI
N-channel TrenchPLUS standard level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 40 A; V_GS = 0 V; T_j = 25 °C; see
Figure 17
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = -10 V;
Q_r
recovered charge
V_DS = 30 V; T_j = 25 °C
Min Typ Max Unit
-
0.85 1.2 V
-
96
-
ns
-
224 -
nC
400
ID
(A) ₁₀
300 20
8 _7.5
200
100
0
0
2
4
03ni86
Label is VGS (V)
7
6.5
6
5.5
5
4.5
4
6
8
10
VDS (V)
12
RDSon
(mΩ)
8
03ni88
4
0
4
8
12
16 _{VGS (V)} 20
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
20
RDSon
(mΩ)
15
VGS = 5.5 V 6 V
6.5 V 7 V
03ni87
10
5
0
0
8V
10 V
20 V
100
200
300 _{ID (A)} 400
2.0
a
1.6
1.2
0.8
0.4
0
−60
0
03ni30
60
120
180
T_j (°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7905-40AI_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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