BUK7905-40AI Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7905-40AI
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T_j ≥ 25 °C; T_j ≤ 175 °C
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 2;
see Figure 3;
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source current
T_mb = 100 °C; V_GS = 10 V; see Figure 2;
T_mb = 25 °C; t_p ≤ 10 µs; pulsed; see Figure 3
T_mb = 25 °C; see Figure 1
T_mb = 25 °C;
I_SM
peak source current
Avalanche ruggedness
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
E_DS(AL)S
non-repetitive
I_D = 75 A; V_sup ≤ 40 V; R_GS = 50 Ω; V_GS = 10 V;
drain-source avalanche T_j(init) = 25 °C; unclamped
energy
Electrostatic discharge
V_esd
electrostatic discharge HBM; C = 100 pF; R = 1.5 kΩ
voltage
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Min Max Unit
-
40
V
-
40
V
-20 20
V
[1] -
155 A
[2] -
75
A
[2] -
75
A
-
620 A
-
272 W
-55 175 °C
-55 175 °C
[1] -
[2] -
-
155 A
75
A
620 A
-
1.46 J
-
4
kV
BUK7905-40AI_2
Product data sheet
Rev. 02 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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