BUK7675-100A Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7675-100A
N-channel TrenchMOS standard level FET
60
I_D
(A)
50
40
30
20
10
0
0
V_GS (V) = 8
03nb31
9 10
20
7.5
6.5
5.5
4.5
2
4
6
8
10
V_DS (V)
R_DSon ⁹⁰
(mΩ)
85
80
75
70
65
60
55
50
5
03nb30
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
10^−3
10^−4
03aa35
min typ max
20
g_fs
(S)
15
10
03nb28
5
10^−5
10^−6
0
2
4
6
V_GS (V)
0
0
10
20
30
40
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7675-100A_2
Product data sheet
Rev. 02 — 31 July 2009
© NXP B.V. 2009. All rights reserved.
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