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BUK7675-100A Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
NXP Semiconductors
BUK7675-100A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS
internal source
inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 A; VGS = 0 V; Tj = 25 °C
ID = 0.25 A; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 13 A; Tj = 175 °C;
see Figure 12 and 13
VGS = 10 V; ID = 13 A; Tj = 25 °C;
see Figure 12 and 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
VDS = 30 V; RL = 2.2 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
from drain lead 6 mm from package to
centre of die; Tj = 25 °C
from upper edge of drain mounting base to
centre of die; Tj = 25 °C
from source lead to source bond pad;
Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 14
IS = 13 A; dIS/dt = -100 A/µs; VGS = -10 V;
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
100 -
-
V
89
-
-
V
1
-
-
V
-
-
4.4 V
2
3
4
V
-
-
500 µA
-
0.05 10
µA
-
2
100 nA
-
2
100 nA
-
-
187 mΩ
-
64
75
mΩ
-
907 1210 pF
-
127 150 pF
-
78
110 pF
-
8
-
ns
-
39
-
ns
-
26
-
ns
-
24
-
ns
-
4.5 -
nH
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
64
-
ns
-
120 -
nC
BUK7675-100A_2
Product data sheet
Rev. 02 — 31 July 2009
© NXP B.V. 2009. All rights reserved.
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