BUK754R3-40B Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/764R3-40B
TrenchMOS™ standard level FET
400
20
ID
(A)
10
300
8
7.5
03nl78
Label is VGS (V)
7
8
RDSon
(mΩ)
7
03nl77
6.5
6
200
6
5
5.5
100
5
4
4.5
0
0
2
4
6
8
10
VDS (V)
3
5
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
9
03nl79
2
RDSon ^{Label is VGS (V)}
a
(mΩ)
6
7
1.5
7
03aa27
1
8
5
10
0.5
20
3
0
100
200
300 _{ID (A)} 400
0
-60
0
60
120
180
Tj (°C)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11133
Product data
Rev. 01 — 09 April 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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