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| BUK7107-55ATE Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET | |||
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NXP Semiconductors
BUK7107-55ATE
N-channel TrenchPLUS standard level FET
Table 6. Characteristics â¦continued
Symbol Parameter
Conditions
LD
internal drain
inductance
from upper edge of drain mounting base to
center of die
LS
internal source
from source lead to source bond pad
inductance
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
Qr
recovered charge
VDS = 30 V
Min Typ Max Unit
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
80
-
ns
-
200 -
nC
BUK7107-55ATE_2
Product data sheet
Rev. 02 â 19 February 2009
© NXP B.V. 2009. All rights reserved.
7 of 15
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