BUK7107-55ATE Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

BUK7107-55ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 19 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
„ Allows responsive temperature
monitoring due to integrated
temperature sensor
„ Electrostatically robust due to
integrated protection diodes
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for standard level gate drive
sources
1.3 Applications
„ Automotive and general purpose
power switching
„ Electrical Power Assisted Steering
(EPAS)
„ Fan control
„ Variable Valve Timing for engines
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
55 V
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; [1] -
-
140 A
see Figure 2; see Figure 3;
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 1
-
-
272 W
Static characteristics
R_DSon drain-source
on-state resistance
Avalanche ruggedness
V_GS = 10 V; I_D = 50 A;
T_j = 25 °C
-
5.8 7
mΩ
E_DS(AL)S non-repetitive
drain-source
avalanche energy
I_D = 68 A; V_sup ≤ 55 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
-
-
460 mJ
[1] Current is limited by power dissipation chip rating