BUK6211-75C Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
BUK6211-75C
N-channel TrenchMOS FET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 15
I_S = 20 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 25 V
Min Typ Max Unit
-
0.8 1.2 V
-
50.5 -
ns
-
105 -
nC
120
g_fs
(S)
100
80
60
40
20
0
0
20
40
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60
80
100
I_D (A)
120
I_D
(A)
100
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80
60
T_j = 175 °C
T_j = 25 °C
40
20
0
0
1
2
3
4
5
V_GS(V)
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
125
I_D
(A)
100
75
50
25
5
4.5
6
10
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V_GS (V) = 4
3.8
3.6
3.4
3.3
3.2
40
R_DSon
(mΩ)
30
20
10
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0
0
1
2
3 _{VDS (V)} 4
Fig 7.
T_j = 25°C; t_p = 300 μs
Output characteristics: drain current as a
function of drain-source voltage; typical values
0
0
2
4
6
8
10
V_GS (V)
T_j = 25°C; I_D = 25 A
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK6211-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
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