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BUK6211-75C Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel TrenchMOS FET | |||
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BUK6211-75C
N-channel TrenchMOS FET
Rev. 02 â 28 September 2010
Product data sheet
1. Product profile
1.1 General description
Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor
(FET) in a plastic package using advanced TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
 AEC Q101 compliant
 Suitable for intermediate level gate
drive sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V Automotive systems
 Electric and electro-hydraulic power
steering
 Engine management
 Motors, lamps and solenoid control
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power dissipation Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A;
resistance
Tj = 25 °C; see Figure 11
Min Typ Max Unit
-
-
75 V
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74 A
-
-
158 W
-
9.3 11 mâ¦
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