BUJD105AD Datasheet, PDF (7/12 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
BUJD105AD
NPN power transistor with integrated diode
I_C
(mA)
250
2.0
V_CEsat
(V)
I_C = 1 A 2 A 3 A 4 A
1.6
001aab995
1.2
100
10
0
min _{VCE (V)}
V_CEOsus
001aab988
Fig 10. Oscilloscope display for collector-emitter
sustaining voltage test waveform
0.8
0.4
0
10^−2
10^−1
1
10
I_B (A)
0.6
V_CEsat
(V)
0.4
0.2
0
10^−1
001aac048
T_j = 100 °C
25 °C
−40 °C
1
10
I_C (A)
Fig 11. Collector-emitter saturation voltage as a
function of base current; typical values
V_CC
I_Bon
V_BB
L_C
L_B
DUT
001aab991
Fig 13. Test circuit for inductive load switching
Fig 12. Collector-emitter saturation voltage as a
function of collector current; typical values
BUJD105AD_1
Product data sheet
Rev. 01 — 8 May 2009
© NXP B.V. 2009. All rights reserved.
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