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| BUJD105AD Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN power transistor with integrated diode | |||
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NXP Semiconductors
BUJD105AD
NPN power transistor with integrated diode
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
hFE
DC current gain
VCE = 5 V; IC = 4 A; Tmb = 25 °C;
see Figure 6; see Figure 7
8
13.5 -
VCE = 5 V; IC = 1 mA; Tmb = 25 °C
10
17
34
VCE = 5 V; IC = 500 mA; Tmb = 25 °C
13
23
36
ICBO
collector-base cut-off IE = 0 A; VCB = 700 V
current
[1] -
-
0.2 mA
ICEO
collector-emitter cut-off IB = 0 A; VCE = 400 V
current
[1] -
-
0.1 mA
ICES
collector-emitter cut-off VCE = 700 V; VBE = 0 V; Tj = 25 °C
[1] -
-
0.2 mA
current
VCE = 700 V; VBE = 0 V; Tj = 125 °C
[1] -
-
0.5 mA
IEBO
emitter-base cut-off
IC = 0 A; VEB = 9 V
current
-
-
10
mA
VBEsat
base-emitter saturation IC = 4 A; IB = 0.8 A; see Figure 8
voltage
-
1
1.5 V
VCEOsus
collector-emitter
sustaining voltage
IB = 0 A; LC = 25 mH; IC = 10 mA;
see Figure 9; see Figure 10
400 -
-
V
VCEsat
collector-emitter
saturation voltage
IB = 0.8 A; IC = 4 A; see Figure 11;
see Figure 12
-
0.3 1
V
VF
forward voltage
Dynamic characteristics
IF = 4 A
-
1.07 1.5 V
tf
fall time
IC = 5 A; IBon = 1 A; VBB = -5 V; LB = 1 µH;
inductive load; Tmb = 25 °C; see Figure 13;
see Figure 14
-
20
50
ns
IC = 5 A; IBon = 1 A; VBB = -5 V; LB = 1 µH;
inductive load; Tmb = 100 °C
IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 â¦;
resistive load; Tj = 25 °C; see Figure 15;
see Figure 16
-
25
100 ns
-
0.3 0.5 µs
ton
turn-on time
ts
storage time
IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 â¦;
Tj = 25 °C; resistive load
IC = 5 A; IBon = 1 A; IBoff = -1 A; RL = 75 â¦;
resistive load; Tj = 25 °C
IC = 5 A; IBon = 1 A; RL = 75 â¦; inductive
load; Tj = 25 °C; LB = 1 µH; VBB = -5 V
IC = 5 A; IBon = 1 A; IBoff = -1 A; inductive
load; Tj = 100 °C; LB = 1 µH; VBB = -5 V
-
0.65 1
µs
-
1.8 2.5 µs
-
1.2 1.7 µs
-
1.4 1.9 µs
[1] Measured with half sine-wave voltage (curve tracer).
BUJD105AD_1
Product data sheet
Rev. 01 â 8 May 2009
© NXP B.V. 2009. All rights reserved.
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