BTA412Y-600B Datasheet, PDF (7/12 Pages) NXP Semiconductors – 12 A three-quadrant triacs, insulated, high commutation, high temperature

NXP Semiconductors
BTA412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature
8. Dynamic characteristics
Table 7. Dynamic characteristics
Symbol Parameter
Conditions
dV_D/dt rate of rise of V_DM = 0.67 × V_DRM(max); exponential
off-state voltage waveform; gate open circuit
T_j = 125 °C
T_j = 150 °C
dI_com/dt
rate of change
of commutating
current
V_DM = 400 V; I_T(RMS) = 12 A; without
snubber; gate open circuit
T_j = 125 °C
T_j = 150 °C
t_gt
gate-controlled I_TM = 20 A; V_D = V_DRM(max); I_G = 0.1 A;
turn-on time
dI_G/dt = 5 A/µs
BTA412Y-600B
BTA412Y-600C
Unit
BTA412Y-800B
BTA412Y-800C
Min Typ Max Min Typ Max
1000 -
600 -
-
500 -
-
300 -
-
V/µs
-
V/µs
20 -
8
-
-
2
-
15 -
-
6
-
-
-
2
-
A/ms
-
A/ms
-
µs
1.6
V_GT
V_GT(25°C)
1.2
0.8
001aag168
3
I_GT
(1)
I_GT(25°C)
(2)
2
(3)
1
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0.4
−50
0
50
100
150
T_j (°C)
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
0
−50
0
50
100
150
T_j (°C)
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function
of junction temperature
BTA412Y_SER_B_C_2
Product data sheet
Rev. 02 — 11 March 2008
© NXP B.V. 2008. All rights reserved.
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