BTA412Y-600B Datasheet, PDF (3/12 Pages) NXP Semiconductors – 12 A three-quadrant triacs, insulated, high commutation, high temperature

NXP Semiconductors
BTA412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature
Table 3. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
P_G(AV)
T_stg
T_j
average gate power
storage temperature
junction temperature
over any 20 ms period
Min
Max Unit
-
1
W
−40
+150 °C
-
150
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
16
P_tot
(W)
conduction form
angle factor
(degrees) a
12
30
4
60
2.8
90
2.2
α
120
1.9
8
180
1.57
003aab810
α = 180°
120°
90°
60°
30°
4
0
0
3
6
9
12
I_T(RMS) (A)
α = conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
160
I_TSM
(A)
120
003aab811
80
40
0
1
I_T
I_TSM
t
1/f
T_j(init) = 25 °C max
10
10²
10³
number of cycles (n)
Fig 2.
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA412Y_SER_B_C_2
Product data sheet
Rev. 02 — 11 March 2008
© NXP B.V. 2008. All rights reserved.
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