BTA316-600BT Datasheet, PDF (7/12 Pages) NXP Semiconductors – 16 A Three-quadrant triacs high commutation high temperature

NXP Semiconductors
BTA316 series BT
16 A Three-quadrant triacs high commutation high temperature
7. Dynamic characteristics
Table 6.
Symbol
dV_D/dt
dI_com/dt
t_gt
Dynamic characteristics
Parameter
Conditions
rate of rise of off-state V_DM = 0.67 × V_DRM(max);
voltage
T_j = 150 °C; exponential
waveform; gate open circuit
rate of change of
commutating current
V_DM = 400 V; T_j = 150 °C;
I_T(RMS) = 16 A; without
snubber; gate open circuit
gate-controlled
turn-on time
I_TM = 20 A; V_D = V_DRM(max);
I_G = 0.1 A; dI_G/dt = 5 A/µs
Min
Typ
Max
Unit
600
-
-
V/µs
8
-
-
A/ms
-
2
-
µs
1.6
V_GT
V_GT(25°C)
1.2
0.8
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3
I_GT
(1)
I_GT(25°C)
(2)
2
(3)
1
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0.4
−50
0
50
100
150
T_j (°C)
0
−50
0
50
100
150
T_j (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function of
junction temperature
BTA316_SER_BT_1
Product data sheet
Rev. 01 — 3 May 2007
© NXP B.V. 2007. All rights reserved.
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