BTA316-600BT Datasheet, PDF (6/12 Pages) NXP Semiconductors – 16 A Three-quadrant triacs high commutation high temperature

NXP Semiconductors
BTA316 series BT
16 A Three-quadrant triacs high commutation high temperature
6. Static characteristics
Table 5. Static characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_GT
gate trigger current V_D = 12 V; I_T = 0.1 A;
see Figure 8
T2+ G+
T2+ G−
T2− G−
I_L
latching current
V_D = 12 V; I_GT = 0.1 A;
see Figure 10
T2+ G+
T2+ G−
T2− G−
I_H
holding current
V_D = 12 V; I_GT = 0.1 A;
see Figure 11
V_T
on-state voltage
I_T = 18 A; see Figure 9
V_GT
gate trigger voltage V_D = 12 V; I_T = 0.1 A;
see Figure 7
V_D = 400 V; I_T = 0.1 A;
T_j = 150 °C
I_D
off-state current
V_D = V_DRM(max); T_j = 150 °C
Min
Typ
Max
Unit
2
-
2
-
2
-
50
mA
50
mA
50
mA
-
-
60
mA
-
-
90
mA
-
-
60
mA
-
-
60
mA
-
1.3
1.5
V
-
0.8
1.5
V
0.25
0.4
-
V
-
0.24
1.2
mA
BTA316_SER_BT_1
Product data sheet
Rev. 01 — 3 May 2007
© NXP B.V. 2007. All rights reserved.
6 of 12