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BTA312Y Datasheet, PDF (7/12 Pages) NXP Semiconductors – 12 A Three-quadrant triacs high commutation insulated
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NXP Semiconductors
BTA312Y series C
12 A Three-quadrant triacs high commutation insulated
8. Dynamic characteristics
Table 7. Dynamic characteristics
Symbol Parameter
Conditions
dVD/dt rate of rise of
VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform;
off-state voltage gate open circuit
dIcom/dt rate of change of VDM = 400 V; Tj = 125 °C; IT(RMS) = 12 A; without snubber;
commutating
gate open circuit
current
tgt
gate-controlled ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs
turn-on time
Min Typ Max Unit
500 -
-
V/µs
20 -
-
A/ms
-
2
-
µs
1.6
VGT
VGT(25°C)
1.2
0.8
001aab101
3
(1)
IGT
IGT(25°C)
2
(2)
(3)
1
001aac669
0.4
−50
0
50
100
150
Tj (°C)
0
−50
0
50
100
150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function of
junction temperature
BTA312Y_SER_C_1
Product data sheet
Rev. 01 — 27 September 2007
© NXP B.V. 2007. All rights reserved.
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