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| BTA312Y Datasheet, PDF (6/12 Pages) NXP Semiconductors – 12 A Three-quadrant triacs high commutation insulated | |||
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NXP Semiconductors
BTA312Y series C
12 A Three-quadrant triacs high commutation insulated
7. Static characteristics
Table 6. Static characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; see Figure 8
T2+ G+
T2+ Gâ
T2â Gâ
IL
latching current
VD = 12 V; IGT = 0.1 A; see Figure 10
T2+ G+
T2+ Gâ
T2â Gâ
IH
holding current
VD = 12 V; IGT = 0.1 A; see Figure 11
VT
on-state voltage
IT = 15 A; see Figure 9
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; see Figure 7
VD = 400 V; IT = 0.1 A; Tj = 125 °C
ID
off-state current
VD = VDRM(max); Tj = 125 °C
Min Typ Max Unit
2
-
2
-
2
-
35 mA
35 mA
35 mA
-
-
50 mA
-
-
60 mA
-
-
50 mA
-
-
35 mA
-
1.3 1.6 V
-
0.8 1.5 V
0.25 0.4 -
V
-
0.1 0.5 mA
BTA312Y_SER_C_1
Product data sheet
Rev. 01 â 27 September 2007
© NXP B.V. 2007. All rights reserved.
6 of 12
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