BTA312X-800C Datasheet, PDF (7/12 Pages) NXP Semiconductors – 12 A Three-quadrant triacs high commutation

NXP Semiconductors
BTA312X series B and C
12 A Three-quadrant triacs high commutation
8. Dynamic characteristics
Table 7. Dynamic characteristics
Symbol Parameter Conditions
dV_D/dt
rate of rise of
off-state
voltage
V_DM = 0.67 × V_DRM(max); T_j = 125 °C;
exponential waveform; gate open circuit
dI_com/dt
rate of change
of
commutating
current
V_DM = 400 V; T_j = 125 °C; I_T(RMS) = 12 A;
without snubber; gate open circuit
t_gt
gate-controlled I_TM = 20 A; V_D = V_DRM(max); I_G = 0.1 A;
turn-on time dI_G/dt = 5 A/µs
BTA312X-600B
BTA312X-800B
Min Typ Max
1000 2000 -
BTA312X-600C Unit
BTA312X-800C
Min Typ Max
500 -
- V/µs
30
-
- 20
-
- A/ms
-
2
-
-
2
- µs
1.6
V_GT
V_GT(25°C)
1.2
0.8
001aab101
3
(1)
I_GT
I_GT(25°C)
2
(2)
(3)
1
001aac669
0.4
−50
0
50
100
150
T_j (°C)
0
−50
0
50
100
150
T_j (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function of
junction temperature
BTA312X_SER_B_C_2
Product data sheet
Rev. 02 — 17 December 2007
© NXP B.V. 2007. All rights reserved.
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