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| BTA312X-800C Datasheet, PDF (6/12 Pages) NXP Semiconductors – 12 A Three-quadrant triacs high commutation | |||
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NXP Semiconductors
BTA312X series B and C
12 A Three-quadrant triacs high commutation
7. Static characteristics
Table 6. Static characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
IGT
gate trigger
VD = 12 V; IT = 0.1 A; see Figure 8
current
T2+ G+
T2+ Gâ
T2â Gâ
IL
latching current VD = 12 V; IGT = 0.1 A; see Figure 10
T2+ G+
T2+ Gâ
T2â Gâ
IH
holding current VD = 12 V; IGT = 0.1 A; see Figure 11
VT
on-state
voltage
IT = 15 A; see Figure 9
VGT
gate trigger
VD = 12 V; IT = 0.1 A; see Figure 7
voltage
VD = 400 V; IT = 0.1 A; Tj = 125 °C
ID
off-state current VD = VDRM(max); Tj = 125 °C
BTA312X-600B
BTA312X-800B
Min Typ Max
BTA312X-600C Unit
BTA312X-800C
Min Typ Max
2
-
50
2
-
35 mA
2
-
50
2
-
35 mA
2
-
50
2
-
35 mA
-
-
-
60
-
-
50 mA
-
-
90
-
-
60 mA
-
-
60
-
-
50 mA
-
-
60
-
-
35 mA
- 1.3 1.6 - 1.3 1.6 V
- 0.8
0.25 0.4
- 0.1
1.5 - 0.8
- 0.25 0.4
0.5 - 0.1
1.5 V
-V
0.5 mA
BTA312X_SER_B_C_2
Product data sheet
Rev. 02 â 17 December 2007
© NXP B.V. 2007. All rights reserved.
6 of 12
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