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| BTA204S-1000C Datasheet, PDF (7/15 Pages) NXP Semiconductors – 3Q Hi-Com Triac High blocking voltage capability | |||
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NXP Semiconductors
BTA204S-1000C
3Q Hi-Com Triac
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C;
see Figure 7
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C;
see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C;
see Figure 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C;
see Figure 8
VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C;
see Figure 8
VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C;
see Figure 8
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
VD = 12 V; Tj = 25 °C; see Figure 9
IT = 5 A; Tj = 25 °C; see Figure 10
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
see Figure 11
ID
off-state current
Dynamic characteristics
VD = 1000 V; Tj = 125 °C
dVD/dt
rate of rise of off-state voltage VDM = 670 V; Tj = 125 °C; exponential
waveform; gate open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 20 V/µs; snubberless
condition; gate open circuit
tgt
gate-controlled turn-on time ITM = 12 A; VD = 1000 V; IG = 0.1 A;
dIG/dt = 5 A/µs
Min Typ Max Unit
2
6
35 mA
2
8
35 mA
2
20
35
mA
-
-
20 mA
-
-
30 mA
-
-
20 mA
-
-
20 mA
-
1.4 1.7 V
-
0.7 1.5 V
0.25 0.4 -
V
-
0.1 0.5 mA
1000 1500 -
3
30
-
V/µs
A/ms
-
2
-
µs
BTA204S-1000C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 6 June 2011
© NXP B.V. 2011. All rights reserved.
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