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BAS16.215 Datasheet, PDF (7/20 Pages) NXP Semiconductors – High-speed switching diodes
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NXP Semiconductors
BAS16 series
High-speed switching diodes
103
IF
(mA)
102
006aab132
10
(1) (2) (3) (4)
1
10−1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF (V)
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
102
IR
(µA)
10
006aab133
(1)
1
(2)
10−1
(3)
10−2
10−3
10−4
(4)
10−5
0
20
40
60
80
100
VR (V)
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = −40 °C
Fig 3. Reverse current as a function of reverse
voltage; typical values
102
IFSM
(A)
10
mbg704
1
10−1
1
10
102
103
104
tp (µs)
Based on square wave currents.
Tj = 25 °C; prior to surge
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
0.8
Cd
(pF)
0.6
mbg446
0.4
0.2
0
0
4
8
f = 1 MHz; Tamb = 25 °C
12 VR (V) 16
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAS16_SER_5
Product data sheet
Rev. 05 — 25 August 2008
© NXP B.V. 2008. All rights reserved.
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