BAS16.215 Datasheet, PDF (6/20 Pages) NXP Semiconductors – High-speed switching diodes

NXP Semiconductors
BAS16 series
High-speed switching diodes
Table 7.
Symbol
R_th(j-sp)
Thermal characteristics …continued
Parameter
Conditions
thermal resistance from
junction to solder point
BAS16H
BAS16J
BAS16T
BAS16VY
BAS316
BAS516
Min Typ Max Unit
[6] _-
-
70 K/W
[6] _-
-
55 K/W
-
-
350 K/W
[5][7] _-
-
260 K/W
[6] _-
-
150 K/W
[6] _-
-
120 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 µm copper strip line.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
[5] Single diode loaded.
[6] Soldering point of cathode tab.
[7] Soldering points at pins 4, 5 and 6.
7. Characteristics
BAS16_SER_5
Product data sheet
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
V_F
forward voltage
I_F = 1 mA
I_F = 10 mA
I_F = 50 mA
I_F = 150 mA
I_R
reverse current
V_R = 25 V
V_R = 80 V
V_R = 25 V; T_j = 150 °C
V_R = 80 V; T_j = 150 °C
C_d
diode capacitance
f = 1 MHz; V_R = 0 V
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
BAS516
t_rr
reverse recovery time
V_FR
forward recovery voltage
Min Typ Max Unit
[1]
-
-
715 mV
-
-
855 mV
-
-
1
V
-
-
1.25 V
-
-
30 nA
-
-
0.5 µA
-
-
30 µA
-
-
50 µA
-
-
1.5 pF
-
-
1
pF
[2] _-
-
4
ns
[3] _-
-
1.75 V
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
[2] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.
[3] When switched from I_F = 10 mA; t_r = 20 ns.
Rev. 05 — 25 August 2008
© NXP B.V. 2008. All rights reserved.
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