PSMN6R0-30YL Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PSMN6R0-30YL
N-channel TrenchMOS logic level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C; see
Figure 17
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/s; V_GS = 0 V;
Q_r
recovered charge
V_DS = 20 V
Min Typ Max Unit
-
0.88 1.2
V
-
32
-
ns
-
25
-
nC
100
I_D 10
(A)
4.5
80
003aac625
60
40
20
0
0
V_GS (V) = 3.2
3
2.8
2.6
2.4
2
4
6
8
10
V_DS (V)
003aac627
80
I_D
(A)
60
40
20
0
0
T_j = 150 °C
25 °C
1
2
3 _{VGS (V)} 4
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical
values
20
R_DSon
(mΩ)
15
10
V_GS (V) = 3.2
5
003aac630
4.5
10
2500
C
(pF)
2000
1500
1000
500
C_iss
C_rss
003aac636
0
0
10
20
30 _{ID (A)} 40
0
0
2
4
6
8
10
V_GS (V)
Fig 7. Drain-source on-state resistance as a
function of drain current; typical values
Fig 8. Input and reverse transfer capacitances as
a function of gate-source voltage; typical
values
PSMN6R0-30YL_1
Preliminary data sheet
Rev. 01 — 10 September 2008
© NXP B.V. 2008. All rights reserved.
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