PSMN6R0-30YL Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PSMN6R0-30YL
N-channel TrenchMOS logic level FET
80
003aac631
120
I_D
(A)
P_der
(%)
60
80
40
40
20
03aa15
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
10³
I_D
(A)
Limit R_DSon = V_DS / I_D
10²
003aac633
10 μs
100 μs
10
1 ms
1
DC
10 ms
100 ms
10^-1
10^-1
1
10
V_DS (V)
10²
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN6R0-30YL_1
Preliminary data sheet
Rev. 01 — 10 September 2008
© NXP B.V. 2008. All rights reserved.
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